Quantum Spin - Hall materials hold the promise of revolutionary devices with
dissipationless spin currents, but have required cryogenic temperatures owing to small
energy gaps. Here, we show theoretically, that a room-temperature regime with a large
energy gap can be achieved within a paradigm that exploits the atomic spin-orbit
coupling. The new concept is based on a substrate-supported monolayer of a high-Z
element, and is experimentally realized as a bismuth honeycomb lattice on top of the
insulator SiC(0001). Using scanning tunneling spectroscopy, we detect a gap of order
0.8 eV and conductive edge states consistent with our theory . Our combined
theoretical and experimental results [1] demonstrate a systematic path to a Quantum
Spin-Hall wide-gap scenario, where the chemical potential resides in the global
system gap, ensuring robust edge conductance.